Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

O: Fachverband Oberflächenphysik

O 18: Poster Monday: 2D Materials 1

O 18.19: Poster

Montag, 5. September 2022, 18:00–20:00, P4

Electron-stimulated photon emission on TMD defects — •Lysander Huberich¹, Jonas Allerbeck¹, Feifei Xiang¹, Riccardo Torsi², Anne Marie Tan³, Pascal Ruffieux¹, Roman Fasel¹, Oliver Gröning¹, Richard Hennig³, Yu-Chuan Lin², Joshua Robinson², and Bruno Schuler¹ — ¹Empa - Swiss Federal Laboratories for Materials Science and Technology, Switzerland — ²Department of Materials Science and Engineering, The Pennsylvania State University, University Park, USA — ³Department of Materials Science and Engineering, University of Florida, USA

Due to their exceptionally long electron spin coherence and spin-selective optical readout nitrogen-vacancy centers in diamond are considered a key building block in quantum sensing and quantum-cryptography applications. However, defects in bulk materials suffer from limited tunability and placement control, poor photon extraction efficiency, and coherence degradation close to the surface. 2D materials such as monolayer transitional metal dichalcogenides (TMDs) are expected to overcome these challenges while offering new synthetic strategies for the bottom-up design of solid-state defects. Here we present an NV⁻ center analog in 2D; the dopant vacancy complex (Re_Mo + Vac_S)⁻ in MoS₂. We investigate its electronic states using scanning tunneling spectroscopy and present atomically-resolved photon emission maps of single TMD defects by means of STM luminescence.