Regensburg 2022 – scientific programme
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O: Fachverband Oberflächenphysik
O 18: Poster Monday: 2D Materials 1
O 18.20: Poster
Monday, September 5, 2022, 18:00–20:00, P4
Electronic and structural properties of Fe-doped SnS van der Waals crystals — •Damla Yesilpinar1,5, Martin Vondráček1, Čestmir Drašar2, Patrik Čermak2, Ondřej Caha3, Karel Carva4, Václav Holý4, Jan Prokleška4, Harry Mönig5, and Jan Honolka1 — 1Institute of Physics, AV ČR, Na Slovance 1999/2 182 21 Praha 8, CZ — 2Faculty of Chemical Technology, University of Pardubice, Studentská 573, 532 10 Pardubice, CZ — 3Department of Condensed Matter Physics, Masaryk University, Žerotínovo nám. 617/9, 601 77 Brno, CZ — 4Department of Condensed Matter Physics, Charles University, Ke Karlovu 5, 121 16 Prague, CZ — 5Physikalisches Institute, Wilhelm-Klemm Str. 10, 48149 Münster, DE
We investigate the effect of low concentrations of iron on the physical properties of SnS van der Waals crystals grown from the melt. By means of scanning tunneling microscopy (STM) and photoemission spectroscopy we study Fe-induced defects and observe an electron doping effect in the band structure of the native p-type SnS semiconductor. Atomically resolved and bias dependent STM data of characteristic defects are compared to ab initio DFT simulations of vacancy (VS and VSn), Fe substitutional (FeSn) and Fe interstitial (Feint) defects. In line with our EXAFS data, we propose the importance of Feint and discuss possible pairing defects, e.g. with VS.