Regensburg 2022 – scientific programme
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O: Fachverband Oberflächenphysik
O 18: Poster Monday: 2D Materials 1
O 18.21: Poster
Monday, September 5, 2022, 18:00–20:00, P4
In Operando Soft X-Ray Photoemission Spectroscopy of TaS2 and HfS2 based memristive devices — •Tammo Zimmermann1, Alena Nierhauve1,2, Matthias Kalläne1,2, Jens Buck1,2, Zhansong Geng3, Chao Zhang3, Frank Schwierz3, Martin Ziegler3, and Kai Rossnagel1,2,4 — 1Institut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität Kiel, 24098 Kiel, Germany — 2Ruprecht-Haensel-Labor, DESY and CAU Kiel, 22607 Hamburg and 24098 Kiel, Germany — 3Department of Electrical Engineering and Information Technology , TU Ilmenau, 98684 Ilmenau, Germany — 4Deutsches Elektronen-Synchroton DESY, 22607 Hamburg, Germany
In neuromorphic engineering interface-based memristive devices (IMDs) are promising candidates to mimic synaptic behavior. A refined understanding of bias-induced changes in the band structure and the underlying transport mechanisms of layered transition-metal dichalcogenide-based IMDs will improve the development toward future applications, e.g., in artificial neural networks. Here, we show first in operando position- and momentum-resolved soft x-ray photoemission spectroscopy measurements obtained from transistor-like TaS2- and HfS2-based IMDs.