Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
O: Fachverband Oberflächenphysik
O 18: Poster Monday: 2D Materials 1
O 18.2: Poster
Montag, 5. September 2022, 18:00–20:00, P4
The effect of morphology of an intercalated Au layer on electronic properties of Graphene — •Amirhossein Bayani and Karin Larsson — Department of Chemistry-Ångström laboratory, Uppsala University, Uppsala, Sweden
Thermal Intercalation processes have recently made it possible to produce large quasi free-standing graphene layers on different substrates. One method, which is based on thermal annealing, uses a 4H-SiC (0001) substrate with an attached carbon buffer layer onto the Si-face of the substrate. Various types of metals have then been used with the purpose to intercalate these metal atoms between SiC and the buffer layers, thereby creating a monolayer (ML) of graphene with an intact Dirac point. Moreover, when positioning heavy metal atoms under graphene, the spin-orbit coupling will increase and thereby enhances the Rashba band splitting. This phenomenon comes from the breakage of a mirror symmetry due to interaction with the substrate. To the knowledge of the authors, the role of the morphology of the intercalated layer on the electronic properties of graphene has not yet been considered and it is worth considering this effect when electronic properties of graphene is wanted to be studied after intercalation. Here we show how the morphology of the intercalated Au layer will affect the electronic properties of a ML of graphene. The possibility to induce a band gap at the Dirac point of graphene by manipulating the staggered potential of a 4H-SiC/Au substrate, is thereby looked for. The calculations are based on density functional theory (DFT) + SOC.