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O: Fachverband Oberflächenphysik

O 18: Poster Monday: 2D Materials 1

O 18.3: Poster

Montag, 5. September 2022, 18:00–20:00, P4

Intercalation of epitaxial graphene on SiC(0001) with sulfur — •Susanne Wolff, Niclas Tilgner, Tassilo Rauschendorfer, Florian Speck, and Thomas Seyller — Chemnitz University of Technology, 09126 Chemnitz, Germany

Epitaxial growth of graphene on SiC in argon atmosphere is a well-established method to produce high quality films. There, the first grown carbon layer is partially covalently bound to the substrate and lacks the graphene-like electronically properties. This so-called buffer layer can be decoupled from the substrate by intercalation. Furthermore, the choice of intercalant manipulates the electronic properties of the decoupled graphene.

We investigated the intercalation of a buffer layer with sulfur by X-ray photoelectron spectroscopy (XPS) and angle-resolved photoelectron spectroscopy (ARPES). The intercalation process was performed in a two-zone furnace where the FeS₂ precursor and the buffer layer can be heated separately. An argon gas flow transports the sublimated sulfur to the sample. Partial intercalated samples show two sulfur peaks at different binding energies in XPS. They can be attributed to intercalated sulfur and sulfur on top of the not intercalated buffer layer. ARPES measurement in the vicinity of the Dirac point showed that sulfur intercalation results in p-type doped decoupled graphene layers.