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O: Fachverband Oberflächenphysik
O 18: Poster Monday: 2D Materials 1
O 18.7: Poster
Monday, September 5, 2022, 18:00–20:00, P4
Bi(110) islands on epitaxial graphene — •Sergii Sologub1,2, Julian Koch1, Chitran Ghosal1, and Christoph Tegenkamp1 — 1Institut für Physik, TU Chemnitz, Reichenhainerstr. 70, 09126 Chemnitz — 2Institute of Physics, NAS of Ukraine, Nauki avenue 46, 03028 Kyiv
The atomic structure and morphology of ultrathin epitaxial Bi islands grown on the graphene/SiC surface was examined by SPA LEED and STM. Bi films with an average height of a few bilayers were deposited at RT and annealed at 410 K for 30 min afterwards. A Volmer-Weber growth mode with a predominance of the Bi(110) orientation was found. LEED patterns show that the Bi(110) structure has three domains rotated by 60∘, with each domain having two subdomains rotated by ±2∘ with the zig-zag direction of Bi parallel to the armchair direction of graphene and four (minority-)subdomains with the zig-zag direction of Bi parallel to the zig-zag direction of graphene. Moreover, STM investigations revealed an elongation of the islands in the zig-zag direction of Bi as well as preferential ("magic") thicknesses (even numbers of Bi monolayers).
Additionally, magneto transport measurements using a 4 T magnet were performed in order to investigate the influence of the Bi islands on the weak localization effekt in graphene.