Regensburg 2022 – scientific programme
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O: Fachverband Oberflächenphysik
O 2: Ultrafast Electron Dynamics at Surfaces and Interfaces 1
O 2.6: Talk
Monday, September 5, 2022, 11:45–12:00, H3
ultrafast carrier dynamics of graphene - 2D Sn van der Waals interface — •Maria-Elisabeth Federl1, Niklas Hofmann1, Leonard Weigl1, Johannes Gradl1, Tim Wehling2,3, Niklas Witt3, Neeraj Mishra4, Camilla Coletti4,5, Stiven Forti4, and Isabella Gierz1 — 1Department of Physics, University of Regensburg, 93040 Regensburg, Germany — 2Institute for Theoretical Physics, University of Bremen, 28359 Bremen, Germany — 3Institute for Theoretical Physics, University of Hamburg, 22607 Hamburg, Germany — 4Center for Nanotechnology Innovation @NEST, Instituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy — 5Graphene Labs, Instituto Italiano di Tecnologia, 16163 Genova, Italy
The interface between epitaxial graphene and SiC(0001) is a confined space that allows for the growth of novel two-dimensional materials (2DMs) and thus graphene/2DM heterostructures. The electronic properties of these heterostructures are usually more complex than those expected from the sum of the individual layers as hybridization between the layers opens up band gaps in the electronic structure and produces electronic wavefunctions that are localized on both rather than individual layers of the heterostructure. We use time- and angle-resolved photoemission spectroscopy to reveal important differences between the non-equilibrium carrier dynamics of quasi-freestanding graphene and graphene proximity-coupled to a 2D metallic Sn layer that we interpret in terms of doping, scattering phase space, and ultrafast charge transfer with the help of ab initio band structure calculations.