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O: Fachverband Oberflächenphysik

O 21: Poster Monday: Topology and Symmetry-Protected Materials

O 21.2: Poster

Montag, 5. September 2022, 18:00–20:00, P4

Electronic Structure of the Weak 3D Topological Insulator Candidate Bi₁₂Rh₃Ag₆I₉ — •Johannes Heßdörfer^1,2, Eduardo Carillo-Aravena^2,3, Armando Consiglio^2,4, Michael Ruck^2,3, Domenico Di Sante⁵, and Friedrich Reinert^1,2 — ¹Experimentelle Physik VII, Universität Würzburg, Würzburg, Germany — ²Würzburg-Dresden Cluster of Excellence ct.qmat, Würzburg Dresden, Germany — ³Anorganische Chemie II, Technische Universität Dresden, Germany — ⁴Theoretische Physik I, Universität Würzburg, Würzburg, Germany — ⁵University of Bologna, Bologna, Italy

The electronic structure of Bi₁₂Rh₃Ag₆I₉, a weak topological insulator (TI) candidate, is investigated by means of angle-resolved photoelectron spectroscopy (ARPES) and density functional theory calculations. The compound consists of alternating layers of a 2D TI in a Kagome configuration, separated by insulating spacer layers. The Kagome net is formed by rhodium centered bismuth cubes, while the spacer consists of silver and iodine. The results are compared to the mother material Bi₁₄Rh₃I₉ [1], denoting the first experimentally observed weak TI. In particular, the influence of the silver substitution into the spacer layer and the potential modification of the coupling between the 2D TI layers is discussed.
[1]Rasche et al., Nature Mater, 12, 422-425 (2013)