Regensburg 2022 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 22: Poster Monday: Surface Structure, Epitaxy, Growth and Tribology

O 22.7: Poster

Montag, 5. September 2022, 18:00–20:00, P4

Investigation of indium fluctuation inside Al0.81In0.19N layers — •Keyan Ji¹, Qianqian Lan², Yan Lu², Michael Schnedler¹, Philipp Ebert¹, and Rafal E. Dunin-borkowski² — ¹Peter Gruenberg Institut, Forschungszentrum Juelich, D-52425 Juelich, Germany — ²Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Juelich, D-52425 Juelich, Germany

We report on the characterization of Al0.81In0.19N/GaN heterostructures grown by Metalorganic Vapor Phase Epitaxy. The specimen was investigated by Electron Holography, High-angle annular dark-field (HAADF) imaging, Secondary-ion mass spectrometry, and Energy-dispersive X-ray spectroscopy. We reveal with different techniques that the Indium concentration gradually increases from 15% to the nominal value of 19% inside Al0.81In0.19N layers. We conduct quantitative analysis on experimental phase images from off-axis electron holography by comparing them with images calculated from the self-consistent electrostatic simulations. Our results illustrated that to accurately determine the electrostatic potential in semiconductor materials from electron holographic phase images, comprehensive knowledge of surface conditions, chemical compositions, and strains is required.