Regensburg 2022 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 30: Semiconductor Surfaces

O 30.4: Vortrag

Dienstag, 6. September 2022, 11:30–11:45, S053

Distance dependance and lateral change of electrostatic forces between Pb-islands and wetting layer on Pb/Si(111)-(7x7) — Ben Lottenburger, •Paul Philip Schmidt, Daniel Rothhardt, Manuel Schulze, and Regina Hoffmann-Vogel — Universität Potsdam, Institut für Physik und Astronomie, Experimentelle Physik kondensierter Materie

Pb islands on silicon show a wide range of interesting properties, such as explosive island growth [1,2]. Previous work has already been able to explain some features, such as the unusual height distribution of the islands[3,4]. To understand this system in more detail, we have investigated the differences in the electrostatic interaction between the tip and the Pb islands on one side and the Pb-containing wetting layer on the other side. We have used scanning force microscopy in the non-contact frequency modulation mode and bias distance measurements in ultrahigh vacuum at ~120K. The Si has been cleaned by direct current heating. Subsequently, Pb has been vapor deposited. The Frequency shift as a function of tip-sample distance has been measured on both Pb islands and the wetting layer. The differences in force and work function between have been investigated both. [1] Hershberger et al, PRL 113, 236101 (2014). [2] Huang et al, PRL 108, 026101 (2012). [3] Hupalo et al, PRB 65, 115406 (2001). [4] Späth et al, PRL 124, 016101 (2020)