O 30: Semiconductor Surfaces
Tuesday, September 6, 2022, 10:30–12:45, S053
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10:30 |
O 30.1 |
Topical Talk:
Surface Phase Transitions in Atomistic Detail and with Femtosecond Resolution — •Wolf Gero Schmidt
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11:00 |
O 30.2 |
Dimer coupling energies of the Si(001) surface examined by SPA-LEED — •Christian Brand, Giriraj Jnawali, Jonas Fortmann, Mohammad Tajik, Alfred Hucht, Peter Kratzer, Hamid Mehdipour, Björn Sothmann, and Michael Horn-von Hoegen
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11:15 |
O 30.3 |
Reduced contact resistance to gallium nitride by plasma-assisted atomic layer deposition — •Maximilian Christis
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11:30 |
O 30.4 |
Distance dependance and lateral change of electrostatic forces between Pb-islands and wetting layer on Pb/Si(111)-(7x7) — Ben Lottenburger, •Paul Philip Schmidt, Daniel Rothhardt, Manuel Schulze, and Regina Hoffmann-Vogel
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11:45 |
O 30.5 |
Growth of well-ordered K3C60 thin films on Bi2Se3 — •Michael Herb and Isabella Gierz
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12:00 |
O 30.6 |
Structure and origin of antiphase domains and related defects in thin GaP epilayers on As-modified Si(100) — •Franz Niklas Knoop, Agnieszka Paszuk, Benjamin Borkenhagen, Oliver Supplie, Manali Nandy, Gerhard Lilienkamp, Peter Kleinschmidt, Thomas Hannappel, and Winfried Daum
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12:15 |
O 30.7 |
Adsorption of CO and CO2 on the Y-stabilized ZrO2(100) surface — •shuang chen, xiaojuan yu, eric sauter, alexei nefedov, stefan heißler, christof wöll, and yuemin wang
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12:30 |
O 30.8 |
Starting from a Fixed Geometry: Real-Time XPS Investigation of a Surface Reaction with Controlled Molecular Configurations — •Timo Glaser, Christian Länger, Julian Heep, Jannick Meinecke, Mathieu Silly, Ulrich Koert, and Michael Dürr
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