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O: Fachverband Oberflächenphysik
O 48: 2D Materials 1: Electronic Structure of Transition Metal Dichalcogenides
O 48.6: Vortrag
Mittwoch, 7. September 2022, 16:15–16:30, S052
Nontrivial Doping Evolution of Electronic Properties in Ising-Superconducting Alloys — •Wen Wan1, Darshana Wickramaratne2, Paul Dreher1, Rishav Harsh1, Igor I. Mazin3, and Miguel Ugeda1 — 1Donostia International Physics Center (DIPC), Paseo Manuel de Lardizábal 4, 20018 San Sebastián, Spain — 2Center for Computational Materials Science, U.S. Naval Research Laboratory, Washington, DC 20375, USA — 3Department of Physics and Astronomy, George Mason University, Fairfax, VA 22030, USA
TMDs offer unprecedented versatility to engineer 2D materials with tailored properties to explore novel structural and electronic phase transitions. Here, we present the atomic-scale evolution of the electronic ground state of a monolayer of Nb1-δMoδSe2 (0<δ<1) using STM/STS measurements at 300 mK. We investigate the atomic and electronic structure of this 2D alloy throughout the metal to semiconductor transition (NbSe2 to MoSe2). Our measurements let us extract the effective doping of Mo atoms, the bandgap evolution and the band shifts, which are monotonic with δ. Furthermore, we demonstrate that collective phases (CDW and superconductivity) are remarkably robust against disorder. We further show that the superconducting TC changes non-monotonically with doping. This contrasting behavior in the normal and superconducting state is explained using first-principles calculations. We show that Mo doping decreases the DOS at EF and the magnitude of pair-breaking spin fluctuations as a function of Mo content. (1) W. Wan, et al. Advanced Materials, accepted (2022).