Regensburg 2022 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 49: Oxide Surfaces 1
O 49.3: Vortrag
Mittwoch, 7. September 2022, 15:30–15:45, S053
Adsorption of Gases on β-Ga2O3 Surfaces — •Jonathan K. Hofmann1,2, Celina S. Schulze1, Martin Franz1, Nipin Kohli1, Dorothee Rosenzweig1, Zbignew Galazka3, and Holger Eisele1 — 1Technische Universität Berlin, Institut für Festkörperphysik, Germany — 2Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich, Germany — 3Institut für Kristallzüchtung, Germany
β-Ga2O3 is a wide band gap material, which is promising for high power and UV (opto-)electronics. The typical n-type doping is controllable via the growth parameters, intentional doping, or post-growth heat treatment. In this contribution, we address the question of its surface properties under typical ambient conditions, i. e., under H2O and O exposure. The β-Ga2O3 single crystals were grown with the Czochralski method [1]. Using Auger electron spectroscopy (AES), and scanning tunnelling microscopy/spectroscopy (STM/STS), we show how the different adsorbed atoms/molecules change the structure and electronic properties of β-Ga2O3 (100) and (001) surfaces under UHV-conditions. On the (100) surface, large clusters of H2O with an undisturbed surface in between were observed. However, STS showed no change in the electronic states. On the (001) surface, oxygen covered almost the complete surface. STS showed that O lifts the band bending inherent in clean β-Ga2O3 surfaces.
The project was supported by the Leibnitz Association, Leibnitz Science Campus GraFOX, project C2-3.
[1] Z. Galazka et al. ECS J. Solid State Sci. Technol. 6 (2017) Q3007