Regensburg 2022 – scientific programme

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O: Fachverband Oberflächenphysik

O 54: Poster Wednesday: 2D Materials 2

O 54.2: Poster

Wednesday, September 7, 2022, 18:00–20:00, P4

Growth and characterization of WSe₂ on epitaxial graphene on SiC(0001) — •Adrian Schütze, Philip Schädlich, and Thomas Seyller — Institute of Physics, TU Chemnitz, Chemnitz, Germany

2D materials such as, for example, graphene, hexagonal boron nitride or transition metal dichalcogenides have recently received much interest as building blocks for electronic devices. For a successful integration of these materials, scalable growth methods are essential. In this work we investigate the growth of WSe₂ by metal organic molecular beam epitaxy (MOMBE) [1] on epitaxial graphene on SiC(0001). In that process W(CO)₆ is used as a precursor in conjunction with selenium vapor produced by decomposition of SnSe₂ in a thermal evaporator. Using MOMBE we were able to grow ultra-thin films of WSe₂ on epitaxial graphene which were characterized by a combination of X-ray photoelectron spectroscopy (XPS), angle resolved photoemission spectroscopy (ARPES), low-energy electron diffraction and microscopy (LEED, LEEM) and atomic force microscopy (AFM). The films were observed to consist of triangular domains. We discuss the influence of the growth parameters such as the substrate temperature on the structural and electronic properties of the layers.

[1] S. Tiefenbacher et al., Surf. Sci. 318 (1994) L1161