Regensburg 2022 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
O: Fachverband Oberflächenphysik
O 54: Poster Wednesday: 2D Materials 2
O 54.4: Poster
Wednesday, September 7, 2022, 18:00–20:00, P4
Competing Processes as Quality Limitation: New Insights into Microscopic Growth Mechanism of hexagonal Boron Nitride on Ir(111) — •Marko Kriegel1, Karim Omambac1, Marin Petrovic2, Birk Finke1, Frank Meyer zu Heringdorf1,3, and Michael Horn-von Hoegen1 — 1Faculty of Physics, University of Duisburg-Essen, D-47057 Duisburg, Germany — 2Center of Cxcellence for Advanced Materials and Sensing Devices, Institude of Physics, HR-10000 Zagreb, Croatia — 3Interdisciplinary Center for Analytics on the Nanoscale (ICAN), D-47057 Duisburg, Germany
Despite the tremendous research effort targeting industrial growth of two-dimensional hexagonal boron nitride (hBN), especially on transition metal surfaces, until today no superior growth recipe was developed, promising large domain sizes, homogeneous lattice constants and a matching orientation of layer and substrate. Here we study single layer hBN grown on Ir(111) via conventional chemical vapor deposition (CVD) using borazine as precursor. We found two competing processes governing the density of hBN domains on a microscopic scale: Kinetic limitations at low T and the disintegration of B3N3 rings as well as the grown layer at high T. The interplay of both processes sets a fundamental limit to the achievable quality in this and other 2D material systems. Our study combines data from high-resolution reciprocal space mapping, using Spot Profile Analyzing Low Energy Electron Diffraction (SPA-LEED), allowing us to determine the complete distribution of domain orientations, and Low Energy Electron Microscopy (LEEM), for the measure of domain densities.