Regensburg 2022 – scientific programme
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O: Fachverband Oberflächenphysik
O 69: Surface Reactions and Heterogeneous Catalysis 2
O 69.9: Talk
Thursday, September 8, 2022, 17:15–17:30, H4
Hydrogen cleaning induced surface changes of GaAs(110) — •Dorothee S. Rosenzweig1, Moritz N.L. Hansemann1, Philipp Ebert2, Michael Schnedler2, Holger Eisele1, and Mario Dähne1 — 1Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin, Germany — 2Forschungszentrum Jülich GmbH, Peter Grünberg Institut, 52425 Jülich, Germany
For the nanoscopic analysis of III/V nanowire (110) surfaces, hydrogen cleaning is a commonly used procedure. While hydrogen cleaning is reported to be destruction free [1] and to achieve clean, atomically flat surfaces—as they are present directly after growth—the actual processes and dynamics during cleaning are rarely examined. However, a detailed understanding of these issues is crucial for the interpretation of electronic surface properties, of the growth of Nanaowires, as well as of built-in and distribution of dopands.
Here, we investigate the modifications of GaAs(110) as model system upon atomic hydrogen exposure at room temperature and under commonly used cleaning conditions at the atomic level. For depiction and measurement at the atomic scale, we used scanning tunneling microscopy and spectroscopy under UHV conditions. Using these methods we study the geometric arrangement of the adsorbed atoms as well as adsorbation induced additional electronic states, band bending, defect states, and Fermi level pinning.
[1] Webb et al., Nano Lett. 15, 8, 4865-4875 (2015)