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O: Fachverband Oberflächenphysik

O 73: Electronic Structure of Surfaces 1

O 73.11: Vortrag

Donnerstag, 8. September 2022, 17:30–17:45, S053

Doping of 1D topologically protected edge states on the (001) surface of the topological crystalline insulator (Pb,Sn)Se — •Florian Keller, Artem Odobesko, and Matthias Bode — Physikalisches Institut, Experimentelle Physik II, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

Topological crystalline insulators (TCI) are a class of materials with topological protected surface states protected by crystalline symmetry. A particularly popular representative of this material class is (Pb,Sn)Se which exhibits four Dirac cones per Brillouin zone. It has been shown that surface step edges with a height equivalent to an odd number of atomic layers results in a topologically protected one-dimensional edge state which is characterized by a peak at the Dirac energy [1]. Theoretical analysis suggests that this state is caused by the broken translation-invariance at the step edge and originates from flat-dispersing bands which connect pairs of surface Dirac nodes [1]. Due to intrinsic doping, the energy of the edge modes of as-grown crystals is usually well separated from the Fermi level. Here we investigate the behavior of these one-dimensional edge modes during Fe surface doping. Since Fe donates charge to p-doped PbSnSe, it results in a downwards-bending of the surface band structure. We observe a peak splitting as the Dirac energy gets close to the Fermi level. We discuss the potential origins of this observation in terms of electron correlations.
[1] Sessi, Paolo, Science 354, 6317 (2016)