Regensburg 2022 – scientific programme
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O: Fachverband Oberflächenphysik
O 81: 2D Materials 4: Heterostructures
O 81.6: Talk
Friday, September 9, 2022, 11:45–12:00, S052
1D p-n junction electronic and optoelectronic devices from transition metal dichalcogenide lateral heterostructures grown by one-pot chemical vapor deposition synthesis — •E. Najafidehaghani1, Z. Gan1, A. George1, T. Lehnert2, G. Q. Ngo3, C. Neumann1, T. Bucher3, I. Staude3, D. Kaiser1, T. Vogl3, U. Hübner4, U. Kaiser2, F. Eilenberger3, and A. Turchanin1 — 1Friedrich Schiller University Jena, Institute of Physical Chemistry, Germany — 2Ulm University, Central Facility of Materials Science Electron Microscopy, Germany — 3Friedrich Schiller University Jena, Institute of Applied Physics, Germany — 4Leibniz Institute of Photonic Technology (IPHT), Germany
Lateral heterostructures (LH) of dissimilar monolayer transition metal dichalcogenides provide great opportunities to build 1D in-plane p-n junctions for sub-nanometer thin low-power electronic, optoelectronic, optical, and sensing devices. Electronic and optoelectronic applications of such p-n junction devices fabricated using a scalable chemical vapor deposition process yielding MoSe2-WSe2 LHs are reported here. Their growth is achieved by in situ controlling the partial pressures of the oxide precursors by a two-step heating protocol. The grown LHs are characterized structurally and optically using optical microscopy, Raman spectroscopy, and photoluminescence spectroscopy. High-resolution transmission electron microscopy further confirms the high-quality 1D boundary between MoSe2 and WSe2 in the LH. p-n junction devices are fabricated from these LH and their applicability solar cells, photodetectors, and electroluminescent emitters are demonstrated.