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TT: Fachverband Tiefe Temperaturen
TT 21: Correlated Electrons: Poster Session
TT 21.3: Poster
Wednesday, September 7, 2022, 15:00–18:00, P1
Single crystal growth of EuPd2Si2 under enhanced gas pressure — •Alexej Kraiker, Marius Peters, Kristin Kliemt, and Cornelius Krellner — Physikalisches Institut, Goethe Universität Frankfurt, 60438 Frankfurt am Main, Germany
The study of collective phenomena raising from enhanced coupling between electrons and phonons is focussed on materials exhibiting phase transitions involving both, electronic and lattice-degrees of freedom. One system providing such a strongly coupled phase transition is EuPd2Si2 crystallizing in the ThCr2Si2 structure type. Because of the the high vapor pressure of Eu, high-quality single crystals of EuT2X2-compounds are very challenging to grow in larger size. One way to prevent Eu from evaporating out of the melt, is growing the crystals in argon overpressure. In this contribution, we present the crystal growth of EuPd2Si2 single crystals with a 20 bar Czochralski-furnace as well as the commissioning of a 150 bar high-pressure furnace which will provide the possibility of both the growth by the Czochralski and the Bridgman method.