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TT: Fachverband Tiefe Temperaturen

TT 29: Transport: Poster Session

TT 29.15: Poster

Donnerstag, 8. September 2022, 15:00–18:00, P1

Low temperature photoluminescence investigation of light-induced degradation in boron doped CZ-silicon — •Katharina Peh¹, Kevin Lauer^1,2, Aaron Flötotto¹, Dirk Schulze¹, and Stefan Krischok¹ — ¹TU Ilmenau, Institut für Physik und Institut für Mikro- und Nanotechnologien, Ilmenau, Germany — ²CiS Forschungsinstitut für Mikrosensorik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt, Germany

Light-induced degradation (LID) in boron doped Czochralski grown (CZ) silicon is a severe problem for silicon devices such as solar cells or radiation detectors. In this contribution boron doped CZ silicon is investigated by low temperature photoluminescence (LTPL) spectroscopy. As already demonstrated on indium p-doped silicon samples, we suspect an ASi-Sii defect also in boron p-doped silicon samples [1]. To find the defect in connection with an additional LID PL peak which was also published by Vaqueiro-Contreras et al. [2], we carried out numerous measurements on boron-doped samples with the help of LTPL at 10 K.

[1] K. Lauer, C. Möller, D. Schulze, C. Ahrens, AIP Advances 5, 017101 (2015)

[2] M. Vaqueiro-Contreras, V.P. Markevich, J. Coutinho, P. Santos, I.F. Crowe, M.P. Halsall, I. Hawkins, S.B. Lastovskii, L.I. Murin, A.R. Peaker, J. Appl. Phys. 125, 185704 (2019)