Regensburg 2022 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 29: Transport: Poster Session

TT 29.7: Poster

Donnerstag, 8. September 2022, 15:00–18:00, P1

Low-temperature contact engineering for MoS2 microtubes — •Jonathan Neuwald¹, Robin T. K. Schock¹, Matthias Kronseder¹, Wolfgang Möckel¹, Simon Reinhardt¹, Luka Pirker², Maja Remškar², and Andreas K. Hüttel¹ — ¹Institute for Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany — ²Solid State Physics Department, Institute Jožef Stefan,1000 Ljubljana, Slovenia

Planar molybdenum disulphide MoS₂, a 2d material similar to graphene, displays a multitude of interesting electronic properties. Nevertheless, only few electronic experiments on MoS₂ nanotubes and microtubes exist. A central reason for this is the difficulty of obtaining stable and transparent Ohmic contacts to transition metal dichalcogenides in general. At the metal-semiconductor interface, the Fermi level in MoS₂ is typically strongly pinned close to the conduction band edge. To avoid a high contact resistance from the formation of a Schottky-barrier, low-work function metals have to be chosen. However, these etch into the MoS₂ structure and therefore damage the tube. Following a recent publication,¹ we use the half-metal bismuth as a contact material, which disables the Fermi level pinning. We optimize the bismuth layer thickness to lower contact resistance and therefore improve the controllability and clarity of transport effects at millikelvin temperatures.

[1] P.C. Shen et al., Nature 593, 211 (2021)