Regensburg 2022 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 3: Superconductivity: Properties and Electronic Structure

TT 3.9: Vortrag

Montag, 5. September 2022, 11:45–12:00, H23

Gate controlled switching in A15 and non-centrosymmetric superconducting devices — •Jennifer Koch, Leon Ruf, Simon Haus, Roman Hartmann, Elke Scheer, and Angelo Di Bernardo — Universität Konstanz, Konstanz, Germany

Gate-controlled superconducting devices have become of great interest for the development of energy-efficient hybrid superconductor/semiconductor computing architectures. The idea behind this technology stems from the recent discovery that superconducting devices can be controlled electrically with the application of a gate voltage [1-3]. We investigate gate-controlled switching devices made of A15 and non-centrosymmetric superconductors like Nb₃Ge (A15) and Nb_0.18Re_0.82 (non-centrosymmetric). These materials promise a low switching voltage due to their disordered structure and high spin-orbit coupling and should therefore be more suitable for the realization of devices working at voltages comparable to those used for the control of CMOS transistors.

[1] G. de Simoni et al., Nat. Nanotechnol. 13, 802 (2018)

[2] F. Paolucci et al. , Nano Lett. 18, 4195 (2018)

[3] F. Paolucci et al., Phys. Rev. Applied 11, 024061 (2019)