Regensburg 2022 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 30: Superconductivity: Poster Session
TT 30.11: Poster
Donnerstag, 8. September 2022, 15:00–18:00, P1
Gate effect on superconducting metal and metal oxide-based nanodevices — •Sohaila Mohammed, Sara Khorshidian, Angelo di Bernardo, and Elke Scheer — Physics Department, University of Konstanz
Quantum devices based on superconducting materials provide various technological applications, such as e.g. current limiters, electronic filters, routers, digital receivers, and photon detectors. The recent discovery of the reversible modulation of the superconducting critical current (Ic) in nanowires and Dayem bridges under the application of a gate voltage has raised a lot of interest for the possible application of this phenomenon towards the realization of superconducting logic devices. The threshold voltages necessary for the full suppression of Ic, however, remain high and correspond to an electrostatic field of ∼ 4 MV/cm. Also, the physical origin of the effect remains controversial. To better understand the mechanism responsible for the suppression of Ic and to determine the physical parameters that can be useful to reduce the high electrostatic fields currently needed for the switching, we have performed a systematic investigation of gate-controlled superconducting devices made of different metal and metal-oxide superconductor materials. We report on our findings and discuss the physical parameters relevant to assess the performance of gate-controlled superconducting devices including their maximum operational temperature, kinetic inductance, leakage currents and switching voltages.