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TT: Fachverband Tiefe Temperaturen
TT 32: Focus Session: Topological Devices (joint session TT/KFM)
TT 32.5: Hauptvortrag
Donnerstag, 8. September 2022, 17:15–17:45, H10
Exploring the full potential of edge channel transport in HgTe based two-dimensional topological insulators — •Saquib Shamim1,2, Wouter Beugeling1,2, Pragya Shekhar1,2, Jan Böttcher3, Andreas Budewitz1,2, Julian-Benedikt Mayer3, Lukas Lunczer1,2, Jonas Strunz1,2, Johannes Kleinlein1,2, Ewelina Hankiewicz3, Björn Trauzettel3, Hartmut Buhmann1,2, and Laurens Molenkamp1,2 — 1Experimentelle Physik III, Physikalisches Institut, Universität Würzburg, Am Hubland, Würzburg, Germany — 2Institute for Topological Insulators, Universität Würzburg, Am Hubland, Würzburg, Germany — 3Institut für Theoretische Physik und Astrophysik, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany.
In this talk, I will discuss some of our recent results on HgTe-based two-dimensional topological insulators. Over the past few years, we have developed a chemical wet-etch technique to fabricate high-quality microstructures in HgTe quantum wells. Firstly, I will discuss some important achievements due to the wet-etch fabrication process: We fabricated quantum point contacts in topological HgTe quantum wells and investigated the interactions among helical edge channels. We also fabricated microstructures from (Hg,Mn)Te quantum wells and observed quantized conductance in these devices. Secondly, I will introduce a gate training method that allows us to approach conductance quantization in macroscopic devices. Finally, I will present recent magnetotransport results on (Hg,Mn)Te quantum wells and the emergence of quantum Hall plateaus at extremely low magnetic fields (~ 50 mT).