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Q: Fachverband Quantenoptik und Photonik
Q 42: Poster III
Q 42.10: Poster
Mittwoch, 8. März 2023, 16:30–19:00, Empore Lichthof
Optical Characterization of InGan/Gan-based nanowires — •Mohsen Esmaeilzadeh1, 2, Pablo Tieben1, 2, Soumyadip Chatterjee3, Apurba Laha3, and Andreas W. Schell1, 2 — 1Physikalisch-Technische Bundesanstalt, 38116 Braunschweig — 2Institute for Solid State Physics, Leibniz University Hannover, 30167 Hannover — 3Department of Electrical Engineering, Indian Institute of Technology Bombay,400076 Mumbai
Recent progress has been achieved in using GaN-based nanostructures as LEDs. GaN as a semiconductor exhibits great thermal and chemical stability and the potential for tuning the band gap by alloying with indium over visible wavelengths.
Indium composition in growing InGaN is very sensitive to temperature. The compositional non-uniformity in InGaN impacts the emission wavelength of the InGaN nanostructures. We are specifically investigating the optical properties of single InGaN/GaN-based nanowires grown on Si (111) substrate using RIBER MBE C21 system equipped with a Veeco plasma cell.
A high resolution SEM microscope was used to investigate the morphology and structure of single nanowires. We used confocal fluorescence microscopy technique to determine the corresponding optical emission properties for a broad range of excitation wavelengths in the visible spectrum. Moreover, we studied the possible damage threshold of the nanowires by exposing them to high laser power for an extended period of time and observing the stability of the emission. Simultaneously, we monitored the corresponding fluorescence spectrum.