SAMOP 2023 – scientific programme
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Q: Fachverband Quantenoptik und Photonik
Q 42: Poster III
Q 42.12: Poster
Wednesday, March 8, 2023, 16:30–19:00, Empore Lichthof
Optical properties of InGaN quantum dot embedded on GaN nanowire — •Hiren Dobariya1, Pablo Tieben1,2, Swagata Bhunia3, Suddhasatta Mahapatra3, Apurba Laha3, and Andreas W. Schell1,2 — 1Institute for Solid State Physics, Gottfried Wilhelm Leibniz University, 30167 Hannover — 2Physikalisch-Technische Bundesanstalt, 38116 Braunschweig — 3Department of Electrical Engineering, Indian Institute of Technology Bombay, 400076 Mumbai
III-Nitride group-based materials, particularly Indium Gallium Nitride (InGaN) have emerged as one of the most critical materials for various applications, such as solid-state lighting, quantum technology, and scientific research. The unique nanostructure of GaN nanowires with quantum dots of InGaN embedded has been in focus for near-UV photonics research in general, as well as its room-temperature single photon generation. In this work, we present the detailed optical characterization of InGaN quantum dots embedded in GaN nanowires, grown by Plasma Assisted Molecular Beam Epitaxial (PAMBE) technique to realize sub-10 nm InGaN quantum dots exhibiting strong quantum confinement. We have carried out a detailed study on the optical characterizations of the InGaN quantum dots (QDs) in a home-built confocal microscope setup. The photoluminescence properties of the InGaN quantum dot at room temperature and cryogenic temperatures show strong emissions ranging from the green to red in the electromagnetic spectrum.