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Q: Fachverband Quantenoptik und Photonik
Q 53: Single Quantum Emitters (joint session Q/QI)
Q 53.3: Vortrag
Donnerstag, 9. März 2023, 15:15–15:30, E214
Localized creation of yellow single photon emitting carbon complexes in hexagonal boron nitride — •Anand Kumar1, Chanaprom Cholsuk1, Askhan Zand1, Mohammad Nasimuzzaman Mishuk1, Tjorben Matthes1, Falk Eilenberger1, Sujin Suwanna2, and Tobias Vogl1 — 1Abbe Center of Photonics, Institute of Applied Physics, Friedrich Schiller University Jena, 07745 Jena, Germany — 2Mahidol University, Bangkok 10400, Thailand
Single-photon emitters in solid-state systems have received a lot of attention as building blocks for numerous quantum technology applications. Defect-based single-photon emitters in hexagonal boron nitride (hBN) stand out due to their optical and physical properties, such as room temperature operation and high single photon luminosity. However, the localized fabrication of these emitters in the crystal lattice is still not very well understood and thus the integration with optical and electronic platforms remains challenging. In the present work, we demonstrate the localized fabrication of emitters by electron beam irradiation using a scanning electron microscope with sub-micron lateral precision. Density functional theory calculations, coupled with experimentally observed emission lines at 575 nm show that the emitters are related to the presence of carbon-based defects, which are activated by the electron beam interaction. We also present results on correlating crystal structure properties and polarization dynamics. Our results indicate that these emitters have a high fabrication yield of identical emitters, which is a crucial advantage for the realization of quantum integrated devices.