SAMOP 2023 – scientific programme
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Q: Fachverband Quantenoptik und Photonik
Q 53: Single Quantum Emitters (joint session Q/QI)
Q 53.7: Talk
Thursday, March 9, 2023, 16:15–16:30, E214
Photoluminescence Excitation Characteristics of Color Centers in hBN at Room Temperature — •Pablo Tieben1,2, Hiren Dobariya2, Nora Bahrami1,2, and Andreas W. Schell1,2 — 1Physikalisch-Technische Bundesanstalt, Braunschweig, Germany — 2Gottfried Wilhelm Leibniz Universität, Hannover, Germany
In the rapidly developing field of quantum technologies single photons play an important role for a number of applications. Optically active color centers in hexagonal boron nitride (hBN) are of particular interest as they exhibit bright single photon emission over a broad range as well as narrow linewidths at and even well above room temperature. Furthermore, as a solid-state single photon source, these emitters can be reliably integrated into photonic circuits and thus offer a large advantage in terms of scalability. A dependency of the fluorescence emission of single emitters on the excitation wavelength has been observed recently, implying a more complex level structure. Systematic measurements of this dependency could reveal more information about the underlying energy levels and thus atomic structure of these defects. Particularly interesting are patterns in the separation between excited states for a classification of different types of emitters. We perform spectroscopic measurements while varying the excitation wavelength over a large range to gain further insight into their characteristic properties and energy level schemes. By analysis of the excitation spectrum of individual defects, we are extracting information on the distribution of energetic transitions across a large number of emitters.