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Q: Fachverband Quantenoptik und Photonik
Q 59: Poster IV
Q 59.61: Poster
Donnerstag, 9. März 2023, 16:30–19:00, Empore Lichthof
Optimizing silicon vacancies in silicon carbide through nanophotonic integration — •Di Liu1, Öney Soykal2, Jawad Ul-Hassan3, Florian Kaiser4, Petr Siyushev1, and Jörg Wrachtrup1 — 1University of Stuttgart and IQST, Germany — 2Booz Allen Hamilton, USA — 3Linköping University, Sweden — 4LIST, Luxembourg
The silicon vacancy (VSi) in silicon carbide (SiC) is an emerging spin qubit for quantum computing and quantum network applications, due to its excellent spin-optical properties and progressive nanophotonic integration. A fully scalable application requires a complete understanding of the system’s internal spin dynamics in order to further engineer cavity-emitter coupling. In this work, we unravel relevant radiative and non-radiative transition rates of VSi in 4H-SiC. They allow evaluation of several crucial parameters such as the quantum efficiency for estimation of the desired Purcell enhancement factor or the radiative transition cyclicity defining the maximally achievable emission rate.
We also show our latest results on integrating VSi centers in nanophotonic waveguides, including direct waveguide-to-fiber coupling in cryogenic environment. This technique allows us to boost the platform efficiency towards relevant applications in quantum communication and computation.