SKM 2023 – scientific programme
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CPP: Fachverband Chemische Physik und Polymerphysik
CPP 23: Optical Properties (joint session HL/CPP)
CPP 23.8: Talk
Tuesday, March 28, 2023, 11:30–11:45, POT 112
GeSn vertical p/n photodetectors formed by 2-step ion implantation — •Shuyu Wen1,2, Saif Shaikh1, Oliver Steuer1, Yonder Berencen1, Slawomir Prucnal1, and Shengqiang Zhou1 — 1Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Germany — 2Institute of Semiconductors, Chinese Academy of Sciences, Bejing, China
Germanium (Ge) is a promising material in integrated circuit (IC) due to the high mobility of hole carrier and highly compatibility in the Si-base IC technology. However, the indirect band structure of Ge leads to the low radiative recombination efficiency, limiting the application in opto-electronics. Alloying Ge with Tin (Sn) is a promising method to obtain energy band modification even to a direct band. Here, high quality Ge0.97Sn0.03 and Ge0.955Sn0.045 alloy is obtained by CMOS-compatible ion implantation method. Tensile strain leads by Sn alloying and damage recovery after Flash annealing (FLA) are characterized by Raman and XRD measurements. A subsequently phosphors implantation is applied to obtain vertical pn photodetectors (PD). The device shows an extended spectral response comparing with commercial Ge PD. This work provides a new CMOS-compatible method to fabricate photodetectors in short-wave infrared.