SKM 2023 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
DS: Fachverband Dünne Schichten
DS 1: 2D Materials and their Heterostructures I: Graphene
DS 1.2: Talk
Monday, March 27, 2023, 09:45–10:00, SCH A 316
Post-processing on graphene field-effect transistors by critical point drying — •Hamid Reza Rasouli1, David Kaiser1, Christof Neumann1, Martha Frey1, Ghazaleh Eshaghi1, Thomas Weimann2, and Andrey Turchanin1 — 1Institute of Physical Chemistry, Friedrich Schiller University Jena, 07743 Jena, Germany — 2Physikalisch-Technische Bundesanstalt (PTB), 38116 Braunschweig, Germany
We report on a critical point drying (CPD) technique with supercritical carbon dioxide (S-CO2) as a post-processing step to enhance electrical performance of graphene field-effect transistors (GFETs). This technique is promising for integration into the industrial clean rooms environment and demonstrates high potential not only for GFETs but also for other electronic, photonic and optoelectronic devices based on 2D materials.