SKM 2023 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 10: Layer Properties II
DS 10.3: Vortrag
Mittwoch, 29. März 2023, 11:30–11:45, SCH A 316
Defect-engineered magnetic field dependent optoelectronics of vanadium doped tungsten diselenide monolayers — •Christin Mädler1,2, Katharina Nisi1,2, Jonas Kiemle1,2, Lukas Powalla3, Alessio Scavuzzo3, Tuan Dung Nguyen4,5, Dinh Loc Duong4,5, Marko Burghard3, Alexander W. Holleitner1,2, and Christoph Kastl1,2 — 1Walter Schottky Institut, Technical University of Munich, Am Coulombwall 4a, 85748 Garching, Germany — 2Munich Center of Quantum Science and Technology (MCQST), Schellingstrasse 4, 80799 Munich, Germany — 3Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany — 4Center for Integrated Nanostructure Physics (CINAP), Institut for Basic Science (IBS), Suwon 16419, Republic of Korea — 5Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
In this work, we investigate semiconducting WSe2 monolayers, substitutionally doped with vanadium atoms, using low temperature luminescence and optoelectronic spectroscopy. V-dopants lead to a p-type doping character and an impurity-related emission ∼160 meV below neutral exciton, both of which scale with the nominal percentage of vanadium dopants. Measurements using field-effect devices of 0.3% V-doped WSe2 demonstrate bipolar carrier tunability. The doped monolayers display a clear magnetic hysteresis in photocurrent measurments for the studied range of carrier densities, whereas the valley polarization of the excitons reveals a non-linear g-factor without a magnetic hysteresis within the experimental uncertainty.