SKM 2023 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 10: Layer Properties II

DS 10.5: Vortrag

Mittwoch, 29. März 2023, 12:00–12:15, SCH A 316

Novel Energy-Filtered Field Stop Technology For Highly Blocking IGBTs — •Robert Koch¹, Marcel Gerold¹, Shavkat Akhmadaliev², Michael Rüb¹, and Elke Wendler³ — ¹Ernst-Abbe-Hochschule, Fachbereich SciTec, Jena, Germany — ²Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany — ³Friedrich-Schiller-Universität, Physikalisch-Astronomische Fakultät, Jena, Germany

Insulated Gate Bipolar Transistors (IGBTs) require on the one hand adjustable switching behavior and on the other hand high blocking capability. The technology presented in this work aims at implementing continuous deep carrier profiles as field stop structures. We insert a micro-patterned silicon membrane (energy filter) into the primary ion beam. This broadens its energy spectrum in a well controlled way, allowing production of extended continuous profiles. The micro patterns are restricted to rectangular shapes, due to the KOH etching manufacturing process. This means, instead of using multiple implantation steps for field-stop formation, our approach results in tailored smooth profiles by using energy-filtered Hydrogen implantations in the range of 1500 to 2500 keV. The defect profiles generated by H-implantation, are transformed into hydrogen-related donors by annealing at 300 to 400 ^∘C. The annealing efficiency is related to the implanted dose (10¹³ to 5× 10¹⁵ cm⁻²), annealing temperature, hold time and the process gas composition (H₂ content 2 %). The defect profiles caused by proton bombardment using an energy filter and subsequent annealing are analyzed by Spreading Resistance Profiling (SRP).