SKM 2023 – scientific programme
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DS: Fachverband Dünne Schichten
DS 11: Thin Film Application
DS 11.5: Talk
Wednesday, March 29, 2023, 12:00–12:15, SCH A 315
Finite Volume Modeling of Two-Dimensional Memristive Devices for Neuromorphic Computing — •Benjamin Spetzler1, Dilara Abdel2, and Patricio Farrell2 — 1Technische Universität Ilmenau, Ilmenau, Germany — 2Weierstrass Institute, Berlin, Germany
In recent years, memristive devices have shown considerable potential for realizing synaptic functionalities in neuromorphic computing systems. Here, we present numerical models to analyze the hysteretic behavior of memristive devices. A finite volume model self-consistently solves the semiconductor equations for the electrostatic potential and the quasi-Fermi levels of electrons and holes. Further, we include the dynamics of mobile dopants and briefly discuss the boundary conditions implemented for the calculation of the switching dynamics and the current-voltage characteristics. Simulations are compared with measurements on two-dimensional flake devices based on MoS2. The results are used to validate the simulations and discuss the underlying switching mechanisms. Implications for the design of memristive devices are derived and discussed.
This work was partially funded by the Carl-Zeiss Foundation via the Project MemWerk and the German Research Foundation (DFG) through the Collaborative Research Centre CRC 1461 "Neurotronics - Bio-Inspired Information Pathway" as well as the Leibniz competition.