SKM 2023 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 12: Poster
DS 12.16: Poster
Mittwoch, 29. März 2023, 17:00–19:00, P3
Mode-selective Raman Signal Enhancement in MoS2/WS2 Heterostructures — •Annika Bergmann1, Mustafa Hemaid1, Rico Schwartz1, Ziyang Gan2, Antony George2, Andrey Turchanin2, and Tobias Korn1 — 1Institute of Physics, University of Rostock, Germany — 2Institute of Physical Chemistry, Friedrich Schiller University Jena, Germany
In the family of van der Waals materials, transition metal dichalcogenides (TMDCs) have attracted much attention in recent years. Stacking various TMDC materials forms heterostructures in which new phenomena, such as interlayer charge transfer and interlayer excitons [1] occur. However, for the observation of interlayer effects good contact between the constituent monolayers is crucial.
Here, we investigate bilayer heterostructures that were formed by combining Chemical Vapor Deposition (CVD) grown MoS2 and exfoliated WS2 monolayers. Photoluminescence quenching is used as an indicator to evaluate the interlayer coupling. In addition, the out-of-plane (A1g) phonon mode provides information on the interfacial contact [2]. We observe a selective enhancement of the WS2 A1g Raman mode in well-coupled MoS2/WS2 heterostructures compared to WS2 monolayers or heterostructures with only poor contact. A systematic study of this phenomenon is presented to elucidate its microscopic origin.
[1] Fang et al., Proc. Natl. Acad. Sci. USA 111 (2014)
[2] Zhou et al., ASC Nano 8 (2014)