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DS: Fachverband Dünne Schichten
DS 12: Poster
DS 12.19: Poster
Mittwoch, 29. März 2023, 17:00–19:00, P3
Phase transformations in few-layer transition metal phosphorus trichalcogenides studied by low-voltage TEM — •Alexander Storm1, Janis Köster1, Mahdi Asl-Gohrbani2, Silvan Kretschmer2, Tatiana Gorelik1, Michael K. Kinyanjui1, Arkady Krasheninnikov2, and Ute Kaiser1 — 1Central Facility Materials Science Electron Microscopy, Ulm University, 89081 Ulm, Germany, — 2Institute of Ion Beam Physics and Materials Research, Helmholt-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany,
In this work we study phase transformations in freestanding few-layer transition metal phosphorus trichalcogenides (TMPTs) induced by electron irradiation as well as thermal annealing in vacuum, using various analytical transmission electron microscopy techniques (TEM). In addition, our results are supported by ab-initio calculations.
We show that due to knock-on damage, first sulphur atoms are ejected in sulphur-based TMPTs at common TEM acceleration voltages (60kV - 300kV), which in turn leads to the formation of defects and strong modifications of the TMPT's properties [1]. For instance, we show that in few-layer MnPS3 and MnPSe3, stable, ultrathin α- and γ-MnS/MnSe phases are formed showing the reliability of this transformation in Mn based TMPTs. Eventually, we elucidate the emerging phases and transition temperatures for few-layer MnPS3, MnPSe3, FePS3, FePSe3, and NiPS3 induced by thermal annealing.
[1] Köster, Storm et al., J. Phys. Chem. C, 126, 36, 15446 (2022).