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SKM 2023 – scientific programme

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DS: Fachverband Dünne Schichten

DS 12: Poster

DS 12.24: Poster

Wednesday, March 29, 2023, 17:00–19:00, P3

Epitaxy and transfer of freestanding oxide perovskites — •Jeremy Maltitz, Duc Nguyen, Alev Yuvanc, Jens Martin, and Jutta Schwarzkopf — Leibniz Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Deutschland

Fabrication of artificial 3D heterostructures is of increasing interest for a broad range of application, such as flexible sensor, memristors, or electronic skins. Layer transfer of thin films has established a new paradigm of material assembly and design in context of 2D-van-der-Waals crystals. Recently, freestanding oxide perovksites have been achieved by introducing a perovskite-like sacrificial layer (Sr3Al2O6) between substrate and functional film. In combination with layer transfer, the functional film can be placed on arbitrary substrates (e.g. silicon wafers). Additionaly, two functional layers (same or different) can be stacked with the opportunity to create moiré patterns by rotating the layers with respect to each other. Therefore, the influence of PLD growth parameter and thickness of SrTiO3/Sr3Al2O6 heterostructures are studied to improve the quality of freestanding SrTiO3 thin films. Furthermore, the solid-solution family of (Ba,Ca,Sr)3Al2O6 enables the possibility to tune the lattice parameter. This property was used to adjust the lattice parameter of the sacrificial layer to closely match the lattice parameter of SrTiO3. With improved growth parameter and lattice matched sacrificial layer, the crackformation of the freestanding film was reduced, paving the path towards the stacking of freestanding thin films.

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