SKM 2023 – scientific programme

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DS: Fachverband Dünne Schichten

DS 12: Poster

DS 12.27: Poster

Wednesday, March 29, 2023, 17:00–19:00, P3

Preparation of oxide ferroelectric membranes by epitaxial sacrificial layers — •Jonas Wawra^1,2, Robin Adlung^1,2, Kornelius Nielsch^1,2, and Ruben Hühne¹ — ¹Institute for Metallic Materials, Leibniz IFW Dresden, Germany — ²Institute of Applied Physics, TU Dresden, Germany

Oxide ferroelectric thin films are used in a variety of applications due to their strong remnant polarization and excellent dielectric, piezoelectric and optoelectric properties. However, well performing and robust materials require a high crystalline quality and orientation, which is commonly achieved by growing the desired ceramic on comparably thick and rigid substrates at high temperatures. This procedure prohibits in most cases the incorporation in advanced organic heterostructures and limits their utilization in flexible devices. One idea to overcome the discrepancy between processing and implementation is the use of a sacrificial layer during growth, which allows to release the functional material as a thin membrane afterwards and enables a transfer to flexible substrates. Here, we present our approach by growing different fully epitaxial hetero-structures of La_0.7Sr_0.3MnO₃ (which can be wet-etched in a hydrochloric acid solution), conducting SrRuO₃ and ferroelectric Ba_1−xSr_xTiO₃ on oxide single crystal substrates by pulsed laser deposition. Different sample architectures were used to obtain a diversity of membranes that allow us to study their microstructure and functional properties with methods like X-ray diffraction, scanning probe microscopy, dielectric and ferroelectric measurement techniques to compare them to similar films still clamped on a substrate.