SKM 2023 – scientific programme
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DS: Fachverband Dünne Schichten
DS 12: Poster
DS 12.28: Poster
Wednesday, March 29, 2023, 17:00–19:00, P3
Resistive switching and oscillations in NdNiO3 and SmNiO3 planar thin film devices — •Farnaz Tahouni-Bonab1, Theodor Luibrand1, Claribel Domínguez2, Jennifer Fowlie2, Stefano Gariglio2, Rodolfo Rocco3, Soumen Bag3, Lorenzo Fratino3, Marcelo Rozenberg3, Jean-Marc Triscone2, Reinhold Kleiner1, Dieter Koelle1, Javier del Valle2, and Stefan Guénon1 — 1Physikalisches Institut, Center for Quantum Science (CQ) an LISA+, Universität Tübingen, 72076 Tübingen, Germany — 2Department of Quantum Matter Physics, Université de Genève, 1211 Geneva, Switzerland — 3Université Paris-Saclay, CNRS, Laboratoire de Physique des Solides, 91405 Orsay, France
Recently, there has been growing interest in strongly correlated materials that undergo a temperature-driven insulator-to-metal transition in the emerging research field of neuromorphic computing. Of particular interest are resistive switching phenomena for emulating integrate-and-fire behavior or self-sustained oscillations for spike train generation. In this study, we used a combination of wide field microscopy and electrical transport measurements to investigate thin film devies of the charge transfer insulators NdNiO3 and SmNiO3. Current-voltage characteristics and photomicrographs reveal resistive switching via an intermediate state with a blurry metallic filament. The intermediate state is accompanied by oscillations in the 10 kHz frequency range that have a characteristic saw-tooth shape indicative of a relaxation oscillator. The intermediate state can be suppressed by changing the slew rate of the current source.