SKM 2023 – scientific programme
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DS: Fachverband Dünne Schichten
DS 12: Poster
DS 12.33: Poster
Wednesday, March 29, 2023, 17:00–19:00, P3
In-situ spectroscopic ellipsometry measurement and analysis of native SiO2 behavior under different atmosphere and temperature — •Younes Slimi1,2, Jannis Waldmann1, Rüdiger Schmid-Gund1, and Stefan Krischok1 — 1Technische Universität Ilmenau, Fachgebiet Technische Physik I, Weimarer Strafte 32, 98693 Ilmenau, Germany — 2Ferhat Abbas University, Institut of optics and precision mechanics, Optics and Applied Photonics laboratory 19000 Setif, Algeria
the most common wafer used in the semiconductor industry nowadays is silicon (Si), the latter oxidizes when left to its own devices. these silicon oxide layers' behavior was investigated using In-situ Spectroscopic ellipsometry to obtain optical constants and thin film thicknesses under different atmospheres (nitrogen, dry air) and temperatures. We found changes in the refractive index and thickness of the SiO2 layer under different conditions due to oxidation and material ablation. These results are meant to be used as possible references for future Electrochemical cells for in-situ Spectroscopic ellipsometry measurement for water splitting devices.