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DS: Fachverband Dünne Schichten

DS 12: Poster

DS 12.44: Poster

Mittwoch, 29. März 2023, 17:00–19:00, P3

Microstructure investigation of pulsed laser deposited GeTe-Sb₂Te₃ heterostructures — •Sonja Cremer¹, Lennart Voss², Nils Braun¹, Lorenz Kienle², and Andriy Lotnyk^1,3,4 — ¹Leibniz Institute of Surface Engineering, Leipzig — ²Faculty of Engineering, University of Kiel — ³Laboratory of Infrared Materials and Devices, Ningbo University — ⁴College of Physics and Optoelectronic Engineering, Harbin Engineering University

Heterostructured phase change materials are an auspicious candidate to overcome high power consumption and resistance drift, hindering the implementation of Ge-Sb-Te based thin films for neuromorphic computing. Aiming at future systematic performance improvement, the impact of deposition parameters on the microstructure of GeTe-Sb₂Te₃ heterostructures (HSs) was investigated. HSs were grown at RT onto SiO₂/Si by PLD. Combining advanced TEM with XRD the microstructure was investigated in-depth. Energy and number of laser pulses affect the layer thickness and composition. The low energy and number of pulses lead to pronounced intermixing and hence to the formation of a single GeSb₂Te₄ layer. Besides, the local structure of the layers within the HS differs. While GeTe layers are amorphous, Sb₂Te₃ layers are polycrystalline and contain nanocrystals featured by varying sizes, defects and multiple phases. Thus, deposition parameters mainly affect the morphology and chemical composition of GeTe-Sb₂Te₃ HSs. However, the main factor influencing the crystallinity of the HS layers is the alloy itself. Financial support by the DFG (No. 445693080) is acknowledged. We thank A. Mill for assistance in FIB preparation.