SKM 2023 – scientific programme

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DS: Fachverband Dünne Schichten

DS 12: Poster

DS 12.45: Poster

Wednesday, March 29, 2023, 17:00–19:00, P3

Dynamics of ion beam-induced defects in phase-change materials investigated by in-situ optical measurements — •Sebastian Gratz, Marcel Buch, Martin Hafermann, and Carsten Ronning — Institute of Solid State Physics, Friedrich-Schiller-Universität Jena, 07743 Jena, Germany

Phase-change materials (PCMs) provide the ability of reversible, repeatable and rapid switching between amorphous and crystalline states. These transformations are accompanied with drastic changes of the electrical and optical properties, which is already been used in rewritable optical data storage or phase-change electronic memory. The transitions can be triggered by external thermal, optical, or electrical stimuli. The most extensively studied PCMs are pseudo-binary (GeTe)_m(Sb₂Te₃)_n chalcogenide compounds (m, n being integer values), short GST. Ion irradiation was recently introduced to induce structural disorder and amorphize initially crystalline GST films. There are multiple studies that investigated the effect of defect engineering of GST compounds. However, there is still a lack of understanding of the dynamic effects, such as dynamic annealing of defects during the ion irradiation process. Furthermore, the direct impact of the specific GST stoichiometry on the ion-beam induced disorder has not been observed yet. Thus, we investigated the dynamics of defect formation for different GST stoichiometries, such as Ge₁Sb₂Te₄ (m=1, n=1), Ge₁Sb₄Te₇ (m=1, n=2), and Ge₂Sb₂Te₅ (m=2, n=1), via in-situ optical measurements during ion irradiation at different temperatures.