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DS: Fachverband Dünne Schichten

DS 12: Poster

DS 12.47: Poster

Mittwoch, 29. März 2023, 17:00–19:00, P3

Investigation of the insights of a TiN-PEALD process in a remote capacitively coupled plasma ALD reactor — •Jan Biedinger, Jan-Michael Schmalhorst, and Günter Reiss — Bielefeld University, Faculty of Physics, Germany

Atomic Layer Deposition (ALD) is a deposition technique of great interest due to precise and reproducible layer control, large-area uniformity and conformal coating. As it bases on chemical surface reactions, it is important to understand the mechanism of an ALD process. In the presented study, the effect of different process parameters (temperature, plasma power, plasma pulse length, NH3 flow, plasma pressure) was studied in a titaniumnitride (TiN) plasma-enhanced ALD process, consisting of sequential pulsing of tetrakis(dimethylamido)titanium (TDMAT) and a NH3 plasma. X-ray reflectivity and 4-point probe measurements were performed to determine the growth rate, roughness, density and electrical resistivity of all TiN films, respectively. Additionally, Auger electron spectroscopy revealed information about the chemical composition. By combining in-situ mass spectrometry data, where plasma species as well as reaction products could be identified during the process, with these ex-situ results, the process could be described in more detail. During the NH3 step, the release of dimethylamine groups was observed, which decreased gradually with time. This correlates with the decline of carbon content by increasing the NH3 step time. Moreover, it was observed that the plasma species (hydrogen and nitrogen radicals) seems to be responsible for decreasing the oxygen content and hence, improving thin film quality.