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DS: Fachverband Dünne Schichten

DS 12: Poster

DS 12.48: Poster

Mittwoch, 29. März 2023, 17:00–19:00, P3

Epitaxial growth of AgxCu1-xI on Al2O3 (0001) — •E. Krüger¹, V. Gottschalch², G. Benndorf¹, R. Hildebrandt¹, A.L. Pereira¹, M. Bar¹, E. Abo El Fadl¹, S. Blaurock², S. Merker², C. Sturm¹, M. Grundmann¹, and H. Krautscheid² — ¹Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, Germany — ²Universität Leipzig, Institut für Anorganische Chemie, Germany

Copper iodide (CuI) and related alloy compounds are of great interest as suitable materials for applications in fully transparent optoelectronic devices. While CuI exhibits intrinsic p-type conductivity with excessive high hole densities typically around 10¹⁸−10¹⁹ cm^-3, it was recently shown that the carrier density can be strongly reduced for AgxCu1-xI alloy and even n-type conductivity can be achieved for high Ag contents [1]. Here we present the epitaxial growth of AgxCu1-xI thin films on Al2O3 (0001) substrates using sublimation technique [2]. We demonstrate that AgxCu1-xI thin films with x≤0.5 exclusively exhibit the zincblende γ-phase, while a coexistence of zincblende γ- and wurtzite β-phases is observed for Ag-rich alloy compositions. In addition we provide the epitaxial relationships between the different AgxCu1-xI phases and the Al2O3 substrate. Moreover, we present another deposition approach based on a solid-state reaction between CuI and AgI, which allows the preparation of single-phase γ-AgxCu1-xI films up to x=0.7.

[1] A. Annadi and H. Gong, Appl. Mater. Today 20, 100703 (2020)

[2] E. Krüger et al., Phys. Stat. Solidi B (accepted)