SKM 2023 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 12: Poster

DS 12.54: Poster

Mittwoch, 29. März 2023, 17:00–19:00, P3

Heterostructure diodes based on reactively co-sputtered Ag_xCu_1−xI thin films — •Jorrit Bredow, Sofie Vogt, Christiane Dethloff, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Felix-Bloch-Institut, Germany

Copper iodide (CuI) is a transparent p-type semiconductor that exhibits high hole mobilities of up to 25 cm²/Vs in polycrystalline thin films^[1]. This renderes CuI an interesting candidate for the fabrication of transparent heterostructure diodes, such as p-CuI/n-ZnO^[2], or p-CuI/n-AgI^[3]. CuI further exhibits a low resistivity, which was shown to be increased with an increasing fraction of silver (Ag) in Ag_xCu_1−xI thin films^[4]. Moreover, a transition from p-type to n-type material of the Ag_xCu_1−xI thin films for x≈0.5 was observed^[4]. However, the Ag_xCu_1−xI thin films were prepared with the Bädeker method, i.e. the iodization of metallic Ag_xCu_1−x thin films.

We present transparent heterostructure diodes based on the ternary compound Ag_xCu_1−xI. The Ag_xCu_1−xI thin films were deposited using reactive co-sputtering of metallic Cu and Ag in Ar and I atmosphere. The feasibility of pn-heterojunction diodes with varying silver content is presented.

^[1] C. Yang et al., ACS Appl. Electr. Mater., 2, 3627-3632, 2020.
^[2] F.-L. Schein et al., Appl. Phys. Lett., 102, 092109, 2013.
^[3] J.-H. Cha and D.-Y. Jung, ACS Appl. Mater. Interfaces, 9, 43807-43813, 2017.
^[4] A. Annadi et al., Appl. Mater. Today, 20, 100703, 2020.