SKM 2023 – scientific programme

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DS: Fachverband Dünne Schichten

DS 12: Poster

DS 12.55: Poster

Wednesday, March 29, 2023, 17:00–19:00, P3

SnTe topological insulator thin film for field-effect transistors — •Sepideh Izadi, Negin Beryani Nezafat, and Gabi Schierning — Department of physics, Experimental physics, Bielefeld University, 33615, Bielefeld, Germany

Topological insulators (TIs) as a new class of quantum materials are one of the potential interests for device fabrication. The unique electrical characteristics of TIs arises from robust metallic states passing through the bulk semiconducting band gap within the material. These surface states with high electrical mobility are considered as an efficient factor regarding high performance transistor. We herein present SnTe topological insulator as a potential candidate for active layer in field-effect transistor (FET). In this work the results of SnTe transistor device fabrication is reported using bottom gate approach. Therewith, Si3N4 and Al2O3 are applied as gate insulating material which are deposited using magnetron sputtering and atomic layer deposition (ALD), respectively. The provided findings and analysis in this work paves the way for SnTe electrical device characterization.