SKM 2023 – scientific programme
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DS: Fachverband Dünne Schichten
DS 12: Poster
DS 12.57: Poster
Wednesday, March 29, 2023, 17:00–19:00, P3
Engineering Vertical Memristive Devices with TMDC Thin Films — •Anna Linkenheil1,2, Theresa Scheler3,2, Ole Gronenberg4, Hendrik Groß4, Michaela Blum3,2, Tzvetan Ivanov1,2, Benjamin Spetzler1, Frank Schwierz1, Peter Schaaf3,2, Lorenz Kienle4, and Martin Ziegler1,2 — 1Micro- and Nanoelectronic Systems, Faculty of Electrical Engineering and Information Technology, TU Ilmenau, Ilmenau, Germany — 2Institute of Micro- and Nanotechnologies, MacroNano®, TU Ilmenau, Ilmenau, Germany — 3Materials for Electrical Engineering and Electronics, Faculty of Electrical Engineering and Information Technology, TU Ilmenau, Ilmenau, Germany — 4Synthesis and Real Structure, Faculty of Engineering, Kiel University, Kiel, Germany
Transition metal dichalcogenides (TMDCs) represent a class of promising materials for memristive devices, which become increasingly important for emerging information processing approaches. In particular, homogeneous thin-films of few layers thickness have advantageous properties for memristive devices, such as excellent scaling behavior combined with the potential integration into planar wafer technology. Here, we assess the electrical properties of sputtered MoS2 based devices and analyze the material. The devices were fabricated in a 4-inch wafer thin film technology, allowing for a systematic electrical investigation. Various electrode materials as well as oxidation treatments and their respective influences on device performance are evaluated using Transmission Electron Microscopy (TEM), revealing probable switching mechanisms and their origin.