SKM 2023 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 14: Thin Oxides and Oxide Layers
DS 14.2: Vortrag
Donnerstag, 30. März 2023, 09:45–10:00, SCH A 315
Optoelectronic Properties of Al-doped ZnO Films Prepared by ALD and Flash Lamp Annealing — •Guoxiu Zhang1,2, Oliver Steuer1, Yu Cheng1, Yi Li1, Kaiman Lin1, Shengqing Zhou1, Yufei Liu2,3, and Slawomir Prucnal1 — 1Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, Dresden, 01328, Germany — 2Key Laboratory of Optoelectronic Technology & Systems (Chongqing University), Ministry of Education, Chongqing 400044, China — 3Faculty of Science and Engineering, Swansea University, Swansea SA2 8PP, UK
Zinc oxide (ZnO) is a wide-band-gap semiconductor considered for transparent and flexible optoelectronics. Effective and controlled doping of ZnO can be realized by substitution Zn or O atoms with metal or non-metal elements like H, Al, Ga for n-type doping and e.g. group V elements for p-type doping. In this work, we have investigated the optoelectronic properties of *-doped ZnO with Al. 100 nm thick Al-doped ZnO (AZO) films were deposited on Si wafers by atomic layer deposition (ALD) varying the distance between Al-layers. After ALD process samples were annealed using ms-range flash lamp annealing (FLA) in either nitrogen or oxygen atmosphere. The highest carrier concentration estimated from Hall-effect measurements is 2.7 *1021 cm-3 and the resistivity is 8.8*10-4 Ωcm, for AZO films where the Al-*-layer is separated by 20-layers of Zn. In general annealing in N2 atmosphere promotes n-type doping while annealing in O2 leads to the formation of highly resistive films.