SKM 2023 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 16: Thermoelectric and Phase Change Materials; Layer Deposition
DS 16.3: Vortrag
Donnerstag, 30. März 2023, 12:00–12:15, SCH A 315
Physical properties of NixCu1-xI thin films deposited by magnetron co-sputtering — •Christiane Dethloff, Sofie Vogt, Daniel Splith, Holger von Wenckstern, and Marius Grundmann — Felix-Bloch-Institut, Universität Leipzig, Deutschland
The highly conductive, p-type semiconductor CuI is subject to various doping approaches to tailor optical and electrical properties [1-4]. As recently shown [5], doping CuI with Ni reduces its high hole density of up to 2×1019 cm-3 [4]. After surpassing a threshold of 15 % Ni content, a carrier conversion, as observed by Annadi et al., turns the NixCu1-xI alloy into an n-type semiconductor, which predestines NixCu1-xI to fabricate p-n-homojunctions.
We present our investigations regarding morphology, electrical and possible ferromagnetic properties of NixCu1-xI thin films with varying Ni contents. The deposition was conducted by reactive magnetron co-sputtering of metallic Cu and Ni in an iodine and argon athmosphere. X-ray and scanning electron microscope as well as Hall-effect and conductivity measurements were used to investigate the thin films. First measurements yielded a low resistivity of 5×10-3 Ωm for x=0.035.
[1]T. Jun et al., Advanced materials 2018 30, e1706573
[2]H. Wu et al., Appl. Phys. Lett. 2021 118, 222107
[3]P. Storm et al., Phys. Status Solidi RRL. 2021 15, 2100214
[4]A. Annadi et al., Applied Materials Today. 2020 20, 100703
[5]A. Annadi et al., ACS applied materials & interfaces. 2020 12, 6048