SKM 2023 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 2: 2D Materials and their Heterostructures II: h-BN and WSe2
DS 2.1: Vortrag
Montag, 27. März 2023, 11:30–11:45, SCH A 316
Engineering of exciton g-factors in van der Waals structures — •Tomasz Woźniak1, Paulo Faria Junior2, Andrey Chaves3, Umm-e-hani Asghar4, and Agnieszka Kuc5 — 1Wrocław University of Science and Technology, Poland — 2Universitaet Regensburg, Germany — 3Universidade Federal do Ceará, Brazil — 4Jacobs Universitaet Bremen, Germany — 5Helmholtz-Zentrum Dresden-Rossendorf, Germany
We develop a fully ab-initio based calculation scheme for excitonic g-factors, which describe their energy dependence on external magnetic field, and apply it to 1L TMDs and MoSe2/WSe2 heterobilayers, obtaining excellent agreement with experiments [1]. We identify a series of magneto-PL peaks in 1L WS2 based on the calculated g-factors of excitons, trions and biexcitons, as well as phonon replicas of the dark trion [2]. We explain the reduction of g-factor measured in MoSe2/WS2 by the spatial confinement of the intralayer moiré exciton [3]. We find a significant strain dependence of excitonic g-factors and dipole strengths in 1L TMDs. It allows to explain the strain-induced hybridization of direct and indirect excitons in WS2 [4,5]. We investigate a new class of hexagonal materials with formula MSi2Z4 (M: Mo, W; Z: N, P, As, Sb), which are isosymmetric to 1L TMDs. We find a new set of circularly polarized excitonic transitions with high binding energies and large positive g-factors [6].
[1] Phys. Rev. B 101, 235408 (2020) [2] Nano Lett. 21, 2519 (2021) [3] Nano Lett. 21, 8641 (2022) [4] Phys. Rev. Lett. 129, 067402 (2022) [5] New J. Phys. 24, 083004 (2022) [6] arXiv:2210.10679 (2022)